Programmable memory devices supported by semiconductive substrates

US6803624B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Paul Rudeck · Boise, US
• Graham R. Wolstenholme · Boise, US
• Robert Carr · Boise, US

Key dates

• Filing date: Jul 3, 2002
• Grant date: Oct 12, 2004
• Expiry date: Jul 3, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/681

Abstract

The invention includes a memory device supported by a semiconductor substrate and comprising in ascending order from the substrate: a floating gate, a dielectric material, a layer consisting essentially of tungsten nitride, a first mass consisting essentially of tungsten, and a second mass consisting essentially of one or more nitride compounds. The invention includes a memory device having a floating gate and a dielectric material over the floating gate. The device has a mass consisting essentially of tungsten over the dielectric material, with the mass having a pair of opposing sidewalls. A pair of sidewall spacers are along the opposing sidewalls of the mass. The sidewall spacers comprise a first layer consisting essentially of one or more nitride compounds and a second layer different from the first layer. The invention includes methods of making memory devices.