Reverse-blocking power semiconductor component having a region short-circuited to a drain-side part of a body zone

US6803627B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventor

• Frank Pfirsch · Birkenfeld, DE

Key dates

• Filing date: Jan 15, 2004
• Grant date: Oct 12, 2004
• Expiry date: Jan 15, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/20

Abstract

A reverse-blocking power semiconductor component includes a drift path subdivided into a source-side area and a drain-side area by a region with opposite doping. Provided above this region is a gate. Alternatively, the body zone of the one conduction type is subdivided into a source-side part and a drain-side part by a region of the other conduction type. This region acts as an electron collector. The reverse-blocking power semiconductor component can be incorporated in compensation components, and power transistors. Methods for producing power semiconductor components are also provided.