Method for fabricating semiconductor devices that uses efficient plasmas
US6806103B1 · kind B1 · utility
0Cited by
4References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2003 |
| Grant date | Oct 19, 2004 |
| Priority date | — |
| Expiry date | Jun 10, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/34
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides, in one embodiment, process of treating a target semiconductor surface. The process includes exposing a test surface to a plasma protocol (110), and measuring chemical changes in discrete locations of the test surface (120). The process further includes preparing a target surface by exposing the target surface to the plasma protocol (140) when a uniformity of the chemical changes are within a performance criterion of the plasma protocol (130). Other embodiments advantageously incorporate this process into methods for making semiconductor devices and integrated circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.