Method and apparatus to overcome anomalies in copper seed layers and to tune for feature size and aspect ratio
US6808612B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2001 |
| Grant date | Oct 26, 2004 |
| Priority date | — |
| Expiry date | Jul 18, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/423
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus for electrochemically depositing a metal into a high aspect ratio structure on a substrate are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a first conductive material disposed thereon in a processing chamber containing an electrochemical bath, depositing a second conductive material on the first conductive material as the conductive material is contacted with the electrochemical bath by applying a plating bias to the substrate while immersing the substrate into the electrochemical bath, and depositing a third conductive material in situ on the second conductive material by an electrochemical deposition technique to fill the feature. The bias may include a charge density between about 20 mA*sec/cm2 and about 160 mA*sec/cm2. The electrochemical deposition technique may include a pulse modulation technique.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.