Patent · US Expired

Semiconductor device having an improved strained surface layer and method of forming a strained surface layer in a semiconductor device

US6808970B2 · kind B2 · utility

7Cited by

6References

16Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Thomas Feudel · Radebeul, DE
Christian Krueger · Stuttgart, DE
Lutz Herrmann · Hamburg, DE

Key dates

Filing date	Jun 24, 2003
Grant date	Oct 26, 2004
Priority date	—
Expiry date	Jun 24, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A manufacturing process for fabricating field effect transistors is disclosed comprising the generation of a strained surface layer on the surface of the substrate on which the transistor is to be fabricated. The strained surface layer is generated by implanting xenon and/or other heavy inert ions into the substrate. Implantation can be performed both after or prior to the gate oxide growth. The processing afterwards is carried out as in conventional MOS technologies. It is assumed that the strained surface layer improves the channel mobility of the transistor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.