Method for making a thin film using pressurization
US6809044B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2002 |
| Grant date | Oct 26, 2004 |
| Priority date | — |
| Expiry date | Mar 20, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a process for making a thin film starting from a substrate (1) of a solid material with a plane face (2) comprising:the implantation of gaseous compounds in the substrate (1) to make a layer of micro-cavities (4) at a depth from the said plane face (2) corresponding to the thickness of the required thin film, the gaseous compounds being implanted under conditions that could weaken the substrate at the layer of micro-cavities,partial or total separation of the thin film from the rest of the substrate (1), this separation comprising a step in which thermal energy is added and pressure is applied to the said plane face (2).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.