High-k gate dielectric with uniform nitrogen profile and methods for making the same
US6809370B1 · kind B1 · utility
51Cited by
13References
15Claims
0Family size
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Key dates
| Filing date | Jul 31, 2003 |
| Grant date | Oct 26, 2004 |
| Priority date | — |
| Expiry date | Jul 31, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High-k transistor gate structures and fabrication methods therefor are provided, wherein a gate dielectric interface region near a semiconductor substrate is provided with very little or no nitrogen, while the bulk high-k dielectric is provided with a uniform nitrogen concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.