Flash memory device capable of repairing a word line
US6809973B2 · kind B2 · utility
2Cited by
3References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 4, 2003 |
| Grant date | Oct 26, 2004 |
| Priority date | — |
| Expiry date | Aug 4, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/789
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is the flash memory device capable of repairing the word line. Fail word lines are repaired using redundancy cells for repairing bit lines by combining X/Y addresses, whereby repair in the direction of the bit line as well as repair in the direction of the word line is made possible. Therefore, it is possible to prevent degradation in the yield and improve reliability of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.