Pre-cleaning for silicidation in an SMOS process
US6811448B1 · kind B1 · utility
106Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2003 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Jul 15, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fabrication system utilizes a protocol for removing native oxide from a top surface of a wafer. An exposure to a plasma, such as a plasma containing hydrogen and argon can remove the native oxide from the top surface without causing excessive germanium contamination. The protocol can use a hydrogen fluoride dip. The hydrogen fluoride dip can be used before the plasma is used. The protocol allows better silicidation in SMOS devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.