Methods and compositions for chemical mechanical polishing shallow trench isolation substrates
US6811470B2 · kind B2 · utility
6Cited by
64References
58Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2002 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Nov 7, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and compositions are provided for planarizing a substrate surface with reduced or minimal defects in surface topography. In one aspect, a method is provided for processing a substrate including positioning a substrate comprising at least first dielectric material and second dielectric material disposed thereon in a polishing apparatus, polishing the substrate with a first polishing composition having a first selectivity, and polishing the substrate with a second polishing composition having a second selectivity greater than the first selectivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.