Method of controlling zinc-doping in a copper-zinc alloy thin film electroplated on a copper surface and a semiconductor device thereby formed
US6811671B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2002 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Feb 7, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1291
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device, having a reduced-oxygen Cu—Zn alloy thin film (30) electroplated on a Cu surface (20) by electroplating, using an electroplating apparatus, the Cu surface (20) in a unique chemical solution containing salts of zinc (Zn) and copper (Cu), their complexing agents, a pH adjuster, and surfactants; and annealing the electroplated Cu—Zn alloy thin film (30); and a semiconductor device thereby formed. The method controls the parameters of pH, temperature, and time in order to form a uniform reduced-oxygen Cu—Zn alloy thin film (30), having a controlled Zn content, for reducing electromigration on the Cu—Zn/Cu structure by decreasing the drift velocity therein which decreases the Cu migration rate in addition to decreasing the void formation rate, for improving device reliability, and for increasing corrosion resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.