Joffre F. Bernard
17Patents
6h-index
20Co-inventors
58Inventor score
Filing activity: Aug 3, 2000 → Dec 20, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6630741B1 | Method of reducing electromigration by ordering zinc-doping in an electroplated copper-zinc interconnect and a semiconductor device thereby formed | Electricity | 47 | Expired |
| US6309959A | Formation of self-aligned passivation for interconnect to minimize electromigration | Electricity | 14 | Expired |
| US6465867B1 | Amorphous and gradated barrier layer for integrated circuit interconnects | Electricity | 14 | Expired |
| US6515367B1 | Sub-cap and method of manufacture therefor in integrated circuit capping layers | Electricity | 11 | Expired |
| US6469387B1 | Semiconductor device formed by calcium doping a copper surface using a chemical solution | Electricity | 8 | Expired |
| US6406996B1 | Sub-cap and method of manufacture therefor in integrated circuit capping layers | Electricity | 8 | Expired |
| US6541286B1 | Imaging of integrated circuit interconnects | Physics | 6 | Expired |
| US6479898B1 | Dielectric treatment in integrated circuit interconnects | Electricity | 5 | Expired |
| US6770559B1 | Method of forming wiring by implantation of seed layer material | Electricity | 4 | Expired |
| US6541860B1 | Barrier-to-seed layer alloying in integrated circuit interconnects | Electricity | 4 | Expired |
| US6444580B1 | Method of reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface and semiconductor device thereby formed | Electricity | 4 | Expired |
| US8093698B2 | Gettering/stop layer for prevention of reduction of insulating oxide in metal-insulator-metal device | Electricity | 2 | Active |
| US6621165B1 | Semiconductor device fabricated by reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface | Electricity | 2 | Expired |
| US6624074B1 | Method of fabricating a semiconductor device by calcium doping a copper surface using a chemical solution | Electricity | 2 | Expired |
| US6811671B1 | Method of controlling zinc-doping in a copper-zinc alloy thin film electroplated on a copper surface and a semiconductor device thereby formed | Emerging Cross-Sectional Technologies | 1 | Expired |
| US7790497B2 | Method to prevent alloy formation when forming layered metal oxides by metal oxidation | Electricity | 0 | Active |
| US8373148B2 | Memory device with improved performance | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.