Methods of forming capacitor constructions, and methods of forming constructions comprising dielectric materials
US6812110B1 · kind B1 · utility
13Cited by
15References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 9, 2003 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | May 9, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/688
Abstract
The invention includes methods in which metal oxide dielectric materials are deposited over barrier layers. The barrier layers can comprise compositions of metal and one or more of carbon, boron and nitrogen, and the metal oxide of the dielectric material can comprise the same metal as the barrier layer. The dielectric material/barrier layer constructions can be incorporated into capacitors. The capacitors can be used in, for example, DRAM cells, which in turn can be used in electronic systems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.