F. Daniel Gealy
94Patents
16h-index
47Co-inventors
84Inventor score
Filing activity: Aug 20, 1997 → Oct 14, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6890596B2 | Deposition methods | Chemistry; Metallurgy | 374 | Expired |
| US6348709B1 | Electrical contact for high dielectric constant capacitors and method for fabricating the same | Electricity | 99 | Expired |
| US5910880A | Semiconductor circuit components and capacitors | Electricity | 67 | Expired |
| US6297527A | Multilayer electrode for ferroelectric and high dielectric constant capacitors | Electricity | 53 | Expired |
| US6146959A | Method of forming capacitors containing tantalum | Electricity | 45 | Expired |
| US6682969B1 | Top electrode in a strongly oxidizing environment | Electricity | 38 | Expired |
| US6191443A | Capacitors, methods of forming capacitors, and DRAM memory cells | Electricity | 32 | Expired |
| US6746916B2 | Method for forming a multilayer electrode for a ferroelectric capacitor | Electricity | 29 | Expired |
| US6777739B2 | Multilayer electrode for a ferroelectric capacitor | Electricity | 26 | Expired |
| US6744093B2 | Multilayer electrode for a ferroelectric capacitor | Electricity | 25 | Expired |
| US6900497B2 | Integrated circuit with a capacitor comprising an electrode | Electricity | 23 | Expired |
| US6282080A | Semiconductor circuit components and capacitors | Electricity | 19 | Expired |
| US6753271B2 | Atomic layer deposition methods | Electricity | 19 | Expired |
| US8049304B2 | Constructions comprising hafnium oxide and/or zirconium oxide | Electricity | 18 | Active |
| US10163977B1 | Chalcogenide memory device components and composition | Electricity | 18 | Active |
| US9543515B2 | Electrode materials and interface layers to minimize chalcogenide interface resistance | Electricity | 17 | Active |
| US6785120B1 | Methods of forming hafnium-containing materials, methods of forming hafnium oxide, and capacitor constructions comprising hafnium oxide | Electricity | 16 | Expired |
| US6919257B2 | Method of forming a capacitor | Electricity | 16 | Expired |
| US6291364A | Method and apparatus for stabilizing high pressure oxidation of a semiconductor device | Emerging Cross-Sectional Technologies | 15 | Expired |
| US6806187B2 | Electrical contact for high dielectric constant capacitors and method for fabricating the same | Electricity | 13 | Expired |
| US6812110B1 | Methods of forming capacitor constructions, and methods of forming constructions comprising dielectric materials | Electricity | 13 | Expired |
| US10256406B2 | Semiconductor structures including liners and related methods | Electricity | 11 | Active |
| US6400552B2 | Capacitor with conductively doped Si-Ge alloy electrode | Electricity | 11 | Expired |
| US6082375A | Method of processing internal surfaces of a chemical vapor deposition reactor | Emerging Cross-Sectional Technologies | 10 | Expired |
| US7217630B2 | Methods of forming hafnium oxide | Electricity | 9 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.