Process of forming copper structures
US6812143B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2002 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Nov 16, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The barrier material of the invention provides for the electrodeposition of copper. The barrier layer includes a dielectric interface surface region, and a copper interface surface region with at least 50 atom percent of a copper interface metal. In particular, the barrier layer of the invention provides for the electrodeposition of copper or copper alloy directly onto the copper interface region of the barrier layer in a direct electrodeposition process. The process includes providing a dielectric layer disposed on an underlayer, contacting a barrier layer to the dielectric layer, and depositing a conducting layer onto the barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.