Method for high aspect ratio HDP CVD gapfill
US6812153B2 · kind B2 · utility
7Cited by
31References
7Claims
0Family size
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Key dates
| Filing date | Apr 30, 2002 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Apr 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.