Test key and method for validating the doping concentration of buried layers within a deep trench capacitors
US6812487B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2003 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Jun 23, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/5002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A test key for validating the doping concentration of buried layers within a deep trench capacitor. The test key is deposited in the scribe line region of a wafer. In the test key of the present invention, the deep trench capacitor is deposited in the scribe line region and has three buried layers of three doping concentrations. An isolation region is deposited in the capacitor, and a first plug, a second and a third plug are coupled to three positions of one buried layer of the three respectively. The present invention determines whether the doping concentration of buried layers within a deep trench capacitor is valid by a first resistance measured between the first plug and the second plug and a second resistance measured between the second plug and the third plug.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.