High density floating gate flash memory and fabrication processes therefor

US6812514B1 · kind B1 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Nian Yang · San Jose, US
• Zhigang Wang · Lexington, US
• Hyeon-Seag Kim · Sunnyvale, US

Key dates

• Filing date: Sep 10, 2003
• Grant date: Nov 2, 2004
• Expiry date: Sep 10, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/035

Abstract

A floating gate flash memory device including a substrate including a source region, a drain region and a channel region positioned therebetween; a stack gate including a floating gate electrode, at least one of sidewall/spacers, second sidewalls or a barrier layer, in which the floating gate is positioned above the channel region. The floating gate may be separated from the channel region by one or more of a reverse tunnel dielectric layer, the barrier layer and a pad dielectric layer. The floating gate may be a metal floating gate.