MRAM cells having magnetic write lines with a stable magnetic state at the end regions
US6812538B2 · kind B2 · utility
3Cited by
6References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 23, 2003 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Sep 23, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method and system for providing and using a magnetic memory are disclosed. The magnetic memory includes a plurality of magnetic memory cells, a plurality of magnetic write lines and a plurality of magnetic biasing structures. The plurality of magnetic write lines have a plurality of end regions. The plurality of magnetic biasing structures coupled to the plurality of end regions of the plurality of magnetic write lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.