David Tsang
16Patents
10h-index
9Co-inventors
65Inventor score
Filing activity: May 6, 1980 → Nov 29, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6982916B2 | Method and system for providing temperature dependent programming for magnetic memories | Physics | 37 | Expired |
| US6963500B2 | Magnetic tunneling junction cell array with shared reference layer for MRAM applications | Physics | 36 | Expired |
| US6909633B2 | MRAM architecture with a flux closed data storage layer | Physics | 35 | Expired |
| US6864551B2 | High density and high programming efficiency MRAM design | Performing Operations; Transporting | 33 | Expired |
| US6870760B2 | Method and system for performing readout utilizing a self reference scheme | Physics | 23 | Expired |
| US6940749B2 | MRAM array with segmented word and bit lines | Physics | 18 | Expired |
| US7869442B1 | Method and apparatus for specifying IP termination in a network element | Electricity | 17 | Active |
| US6977838B1 | Method and system for providing a programmable current source for a magnetic memory | Physics | 13 | Expired |
| US6870759B2 | MRAM array with segmented magnetic write lines | Physics | 11 | Expired |
| US6909630B2 | MRAM memories utilizing magnetic write lines | Physics | 10 | Expired |
| US8981813B2 | Method and apparatus for facilitating communication between programmable logic circuit and application specific integrated circuit with clock adjustment | Electricity | 5 | Active |
| US6982445B2 | MRAM architecture with a bit line located underneath the magnetic tunneling junction device | Electricity | 4 | Expired |
| US6812538B2 | MRAM cells having magnetic write lines with a stable magnetic state at the end regions | Physics | 3 | Expired |
| US4270887A | Closure mechanism for tire curing press | Performing Operations; Transporting | 1 | Expired |
| US4268234A | Tire curing assembly with improved seal | Performing Operations; Transporting | 0 | Expired |
| US6933550B2 | Method and system for providing a magnetic memory having a wrapped write line | Physics | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.