Epitaxial base bipolar transistor with raised extrinsic base

US6812545B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• James S. Dunn · Jericho, US
• David L. Harame · South Burlington, US
• Jeffrey B. Johnson · Hague, US
• Robb Johnson · Thousand Oaks, US
• Louis D. Lanzerotti · Burlington, US
• Stephen A. St. Onge · Colchester, US

Key dates

• Filing date: Apr 29, 2003
• Grant date: Nov 2, 2004
• Expiry date: Apr 29, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/177

Abstract

An epitaxial base bipolar transistor comprising an epitaxial single crystal layer on a single crystal single substrate; a raised emitter on the semiconductor surface; a raised extrinsic base on the surface of the semiconductor substrate; an insulator between the raised emitter and the raised extrinsic base, wherein said insulator is a spacer; and a diffusion from the raised emitter and from the raised extrinsic base to provide an emitter diffusion and an extrinsic base diffusion in said single crystal substrate, wherein said emitter diffusion has an emitter diffusion junction depth, and wherein said emitter extends to said substrate surface and said base extends to said substrate surface, wherein said emitter to base surface height difference is less than 20% of said emitter junction depth is provided as well as methods for fabricating the same.