On-die thermal monitoring technique
US6814485B2 · kind B2 · utility
12Cited by
13References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2003 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | Jan 23, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K7/01
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and apparatus for monitoring a temperature on an integrated circuit that includes a thin gate oxide transistor. A temperature monitoring system that includes a thick gate oxide transistor is provided. The temperature monitoring system includes a temperature independent voltage generator, a temperature dependent voltage generator that includes a thick gate oxide transistor, and a quantifier operatively connected to the temperature independent voltage generator and temperature dependent voltage generator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.