Low temperature, low-resistivity heavily doped p-type polysilicon deposition
US6815077B1 · kind B1 · utility
12Cited by
31References
20Claims
0Family size
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Key dates
| Filing date | May 20, 2003 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | May 20, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method to create a low resistivity P+ in-situ doped polysilicon film at low temperature from SiH4 and BCl3 with no anneal required. At conventional dopant concentrations using these source gases, as deposition temperature decreases below about 550 degrees C., deposition rate decreases and sheet resistance increases, making production of a high-quality film impossible. By flowing very high amounts of BCl3, however, such that the concentration of boron atoms in the resultant film is about 7×1020 or higher, the deposition rate and sheet resistance are improved, and a high-quality film is produced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.