Stacked gate flash memory device and method of fabricating the same

US6815290B2 · kind B2 · utility

Assignee

• NANYA TECHNOLOGY CORPORATION · TW

Inventors

• Chi-Hui Lin · Taipei, TW
• Chung-Lin Huang · Taichung, TW

Key dates

• Filing date: Jun 10, 2003
• Grant date: Nov 9, 2004
• Expiry date: Jun 10, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6894

Abstract

A stacked gate flash memory device and method of fabricating the same. A cell of the stacked gate flash memory device in accordance with the invention is disposed in a cell trench within a substrate and source and drain regions are formed in the same substrate side of the adjacent isolation trenches. Thus, the stacked gate flash memory device of the invention can achieve high integration of memory cells.