Tunnel magnetoresistive effect element, method of manufacturing tunnel magnetoresistive effect element and magnetic memory device
US6815745B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2003 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | Jan 14, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3254
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
When a tunnel magnetoresistive effect element having a multilayer film structure containing two ferromagnetic material layers (11, 12) and a barrier layer (13) is constructed, after one ferromagnetic material layer (11) had been deposited, a conductive layer (16), formed by adding a material of an element different from a metal material to said metal material serving as a principal component thereof, is deposited on the ferromagnetic material layer (11) and the barrier layer (13) is formed by oxidizing the conductive layer (16), whereafter the other ferromagnetic material layer (12) is deposited on the barrier layer (13). Thus, in the tunnel magnetoresistive effect type memory device, dispersion of resistance value between respective elements can be suppressed while a large TMR ratio can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.