Application of the CVD bilayer ARC as a hard mask for definition of the subresolution trench features between polysilicon wordlines
US6818141B1 · kind B1 · utility
60Cited by
7References
19Claims
0Family size
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Key dates
| Filing date | Jun 10, 2002 |
| Grant date | Nov 16, 2004 |
| Priority date | — |
| Expiry date | Nov 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of removing organic anti-reflective coating (ARC) by ashing in an integrated circuit fabrication process can include providing an oxide-nitride-oxide (ONO) stack over a silicon substrate, providing a poly layer over the ONO stack, and patterning spaces in the poly layer using a patterned carbon bilayer ARC layer and a patterned hardmask layer. The patterned carbon bilayer ARC layer is ashed away before patterning spaces in the poly layer. Ashing the carbon bilayer ARC layer helps prevent damage to the ONO stack, improving the quality of the fabricated device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.