Method for fabricating a semiconductor memory device

US6818503B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Rainer Bruchhaus · Yokohama, JP
• Gerhard Enders · Glen Allen, US
• Walter Hartner · Munich, DE
• Igor Kasko · Mennecy, FR
• Matthias Kronke · Dresden, DE
• Thomas Mikolajick · Birkenfeld, DE
• Nicolas Nagel · Yokohama, JP
• Michael Röhner · Hersbruck, DE
• Volker Weinrich · Paris, FR

Key dates

• Filing date: Jul 1, 2002
• Grant date: Nov 16, 2004
• Expiry date: Sep 2, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/692

Abstract

A method of fabricating semiconductor memory devices is simplified by providing at least some plug regions, which are provided for contacting storage capacitor devices of a capacitor configuration, such that the plug regions have in each case a region that is elevated above the surface region of a passivation region.