Igor Kasko
10Patents
3h-index
25Co-inventors
52Inventor score
Filing activity: Feb 26, 2001 → Jun 9, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6985384B2 | Spacer integration scheme in MRAM technology | Electricity | 34 | Expired |
| US6573542B2 | Capacitor electrodes arrangement with oxygen iridium between silicon and oxygen barrier layer | Electricity | 10 | Expired |
| US6680500B1 | Insulating cap layer and conductive cap layer for semiconductor devices with magnetic material layers | Electricity | 9 | Expired |
| US6686265B2 | Method of producing a capacitor electrode with a barrier structure | Electricity | 2 | Expired |
| US6495415B2 | Method for fabricating a patterned layer | Electricity | 2 | Expired |
| US8284596B2 | Integrated circuit including an array of diodes coupled to a layer of resistance changing material | Physics | 2 | Active |
| US6852240B2 | Method of manufacturing a ferroelectric capacitor configuration | Electricity | 1 | Expired |
| US6806097B2 | Method for fabricating ferroelectric memory cells | Electricity | 0 | Expired |
| US6818503B2 | Method for fabricating a semiconductor memory device | Electricity | 0 | Expired |
| US6875652B2 | Method for producing ferroelectric capacitors and integrated semiconductor memory chips | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.