Method of forming silicon-containing insulation film having low dielectric constant and high mechanical strength
US6818570B2 · kind B2 · utility
18Cited by
6References
49Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2003 |
| Grant date | Nov 16, 2004 |
| Priority date | — |
| Expiry date | Jan 24, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/91
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon-containing insulation film having high mechanical strength is formed on a semiconductor substrate by (a) introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon compound containing cross-linkable groups, (ii) a cross-linking gas, and (iii) an inert gas, into a reaction chamber where a substrate is placed; (b) applying radio-frequency power to create a plasma reaction space inside the reaction chamber; and (c) controlling a flow of the reaction gas and an intensity of the radio-frequency power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.