Writing methodology to reduce write time, and system for performing same
US6818910B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2002 |
| Grant date | Nov 16, 2004 |
| Priority date | — |
| Expiry date | Jan 17, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31776
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention is generally directed to various reticle writing methodologies to reduce write time, and a system for performing same. In one illustrative embodiment, the method comprises exposing a layer of photoresist in accordance with a first writing pattern in a first area of the layer of photoresist and exposing the layer of photoresist in accordance with a second writing pattern in a second area of the layer of photoresist, the first and second areas of the layer of photoresist overlapping one another in at least one region. In another illustrative embodiment, the method comprises creating a collection of digital data corresponding to a desired pattern for a reticle and separating the collection of digital data into at least two separate groups of data, a first of the data groups being used to define a first writing pattern for the reticle, a second of the data groups being used to define a second writing pattern for the reticle, wherein the first and second writing patterns overlap one another in at least one region. In yet another illustrative embodiment, the method comprises forming a layer of photoresist above at least one of a semiconducting substrate and a proces…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.