Patent · US Expired

Split gate flash memory device and method of fabricating the same

US6818948B2 · kind B2 · utility

10Cited by
6References
30Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJul 16, 2003
Grant dateNov 16, 2004
Priority date
Expiry dateJul 16, 2023

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D30/6894

Abstract

A split gate flash memory device and method of fabricating the same. A cell of the split gate flash memory device in accordance with the invention is disposed in a cell trench within a substrate to achieve higher integration of memory cells.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.