Hall effect ion source at high current density
US6819053B2 · kind B2 · utility
31Cited by
13References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 21, 2003 |
| Grant date | Nov 16, 2004 |
| Priority date | — |
| Expiry date | Apr 21, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J27/16
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A high current density, low voltage ion source includes a vacuum chamber. A plasma source induces generation of a plasma within the chamber, or injects a plasma directly into the chamber. A magnetic and electric field cooperate to guide the ions from the plasma region in a beam towards a substrate to be processed by the ions. A method of use of the ion source includes production of an ion beam for processing of a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.