RF transistor amplifier linearity using suppressed third order transconductance
US6819184B2 · kind B2 · utility
54Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2002 |
| Grant date | Nov 16, 2004 |
| Priority date | — |
| Expiry date | Nov 6, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/211
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The linearity of a transistor amplifier comprising a plurality of transistors operating parallel is improved by reducing the odd order transconductance derivatives of signals generated by the transistors. The transistors can be provided in groups with each group having a different bias voltage applied thereto or each group of transistors can have a different input signal applied thereto. The groups of transistors can have different physical parameters such as the width to length ratio of gates in field effect transistors and threshold voltages for the transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.