Anode and anode chamber for copper electroplating
US6821407B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2002 |
| Grant date | Nov 23, 2004 |
| Priority date | — |
| Expiry date | Apr 11, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/241
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An electroplating system includes (a) a phosphorized anode having an average grain size of at least about 50 micrometers and (b) plating apparatus that separates the anode from the cathode and prevents most particles generated at the anode from passing to the cathode. The separation may be accomplished by interposing a microporous chemical transport barrier between the anode and cathode. The relatively few particles that are generated at the large grain phosphorized copper anode are prevented from passing into the cathode (wafer) chamber area and thereby causing a defect in the part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.