Method of manufacturing a semiconductor component and semiconductor component thereof
US6821829B1 · kind B1 · utility
2Cited by
14References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2000 |
| Grant date | Nov 23, 2004 |
| Priority date | — |
| Expiry date | Sep 5, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A method of manufacturing a semiconductor component includes providing a substrate (110) with a surface (119), providing a layer (120) of undoped gallium arsenide over the surface of the substrate, forming a gate contact (210) over a first portion of the layer, and removing a second portion of the layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.