Method to achieve increased trench depth, independent of CD as defined by lithography
US6821864B2 · kind B2 · utility
1Cited by
8References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 7, 2002 |
| Grant date | Nov 23, 2004 |
| Priority date | — |
| Expiry date | May 19, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76895
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming at least one deep trench structure having an increased trench depth is provided. The method includes providing at least one deep trench having sidewalls that extend to a common bottom wall in a surface of a substrate. Each deep trench has initial dimensions that are wider than targeted dimensions for the deep trenches. To reduce the initial dimensions to that of the targeted dimensions, an epitaxial silicon film is formed selectively or non-selectively on at least some portions of the sidewalls using a low-temperature ultra-high vacuum epitaxial silicon growth tehnique.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.