Deep isolation trenches

US6821865B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Michael Wise · Washington, US
• Andreas Knorr · Saratoga Springs, US

Key dates

• Filing date: Dec 30, 2002
• Grant date: Nov 23, 2004
• Expiry date: Dec 30, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76229
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming deep isolation trenches in the fabrication of ICs is disclosed. The substrate is prepared with deep isolation trenches. The isolation trenches are partially filled with a first dielectric material. An etch mask layer is deposited on the substrate and used to remove excess first dielectric material on the surface of the substrate. The isolation trenches are then completely filled with a second dielectric material. Excess second dielectric material is then removed from the surface of the substrate.