Patent · US Expired

Method of fabricating a semiconductor device

US6821884B2 · kind B2 · utility

1Cited by

11References

15Claims

0Family size

Assignee

INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW · BE

Inventors

Serge Vanhaelemeersch · Leuven, BE
Karen Maex · Herent, BE

Key dates

Filing date	Feb 15, 2002
Grant date	Nov 23, 2004
Priority date	—
Expiry date	May 23, 2022

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

This invention relates to Integrated Circuit (IC) processing and fabrication. A device and a method are provided for etching an opening in an insulating layer while depositing a barrier layer on the side walls of the opening without essentially depositing a barrier layer on the bottom of the opening.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.