IMP TiN barrier metal process
US6821886B1 · kind B1 · utility
9Cited by
6References
45Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2003 |
| Grant date | Nov 23, 2004 |
| Priority date | — |
| Expiry date | Sep 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A new method is provided for the creation of an adhesion/barrier layer over which a tungsten interconnect is created. The invention reduces metal extrusion and effects of pin-holes by dividing the process of barrier material of TiN deposition into phases, whereby after about half the thickness of the required layer of TiN has been deposited, an intermediate and very thin layer of Ti is deposited. After the thin layer of Ti has been deposited, the deposition of the barrier layer of TiN is continued to the point where the required thickness for the layer of TiN has been reached.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.