Patent · US Expired

CMP process

US6821894B2 · kind B2 · utility

0Cited by
7References
7Claims
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Assignee

Inventors

Key dates

Filing dateAug 20, 2001
Grant dateNov 23, 2004
Priority date
Expiry dateAug 20, 2021

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/3212
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The optimization of a CMP process provides the use of an auxiliary layer (4) between a dielectric (1) in the vicinity of patterned portions and a layer of a liner (2). If the liner (2) is perforated in the CMP process, then the undercutting of the liner (2) by the chemical removal of the auxiliary layer (4) simplifies the process overall. Advantages are significantly lower defect densities due to CMP scratches, fewer short circuits, fewer alignment errors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.