Method for avoiding carbon and nitrogen contamination of a dielectric insulating layer
US6821905B2 · kind B2 · utility
16Cited by
4References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2002 |
| Grant date | Nov 23, 2004 |
| Priority date | — |
| Expiry date | Jan 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for preventing carbon and nitrogen penetration from a deposited overlayer into a dielectric insulating layer to improve a subsequent photolithographic patterning and anisotropic etching process including providing a semiconductor wafer having a process surface including an exposed dielectric insulating layer; and, subjecting the dielectric insulating layer to a hydrogen containing plasma treatment to form a penetration resistance to one of nitrogen containing and carbon containing species.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.