Method and apparatus for growing silicon carbide crystals
US6824611B1 · kind B1 · utility
16Cited by
9References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 8, 1999 |
| Grant date | Nov 30, 2004 |
| Priority date | — |
| Expiry date | Dec 30, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/902
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus for controlled, extended and repeatable growth of high quality silicon carbide boules of a desired polytype is disclosed which utilizes graphite crucibles coated with a thin coating of a metal carbide and in particular carbides selected from the group consisting of tantalum carbide, hafnium carbide, niobium carbide, titanium carbide, zirconium carbide, tungsten carbide and vanadium carbide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.