Michael James Paisley
18Patents
10h-index
28Co-inventors
72Inventor score
Filing activity: Dec 17, 1997 → Dec 17, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8052794B2 | Directed reagents to improve material uniformity | Chemistry; Metallurgy | 347 | Active |
| US6063186A | Growth of very uniform silicon carbide epitaxial layers | Emerging Cross-Sectional Technologies | 36 | Expired |
| US6297522A | Highly uniform silicon carbide epitaxial layers | Emerging Cross-Sectional Technologies | 32 | Expired |
| US7118781B1 | Methods for controlling formation of deposits in a deposition system and deposition methods including the same | Chemistry; Metallurgy | 18 | Expired |
| US6824611B1 | Method and apparatus for growing silicon carbide crystals | Emerging Cross-Sectional Technologies | 16 | Expired |
| US6797069B2 | Gas driven planetary rotation apparatus and methods for forming silicon carbide layers | Electricity | 16 | Expired |
| US6974720B2 | Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby | Electricity | 15 | Expired |
| US6569250B2 | Gas-driven rotation apparatus and method for forming silicon carbide layers | Chemistry; Metallurgy | 14 | Expired |
| US6849874B2 | Minimizing degradation of SiC bipolar semiconductor devices | Electricity | 13 | Expired |
| US8430960B2 | Deposition systems and susceptor assemblies for depositing a film on a substrate | Chemistry; Metallurgy | 10 | Active |
| US6896738B2 | Induction heating devices and methods for controllably heating an article | Chemistry; Metallurgy | 7 | Expired |
| US7427326B2 | Minimizing degradation of SiC bipolar semiconductor devices | Electricity | 4 | Active |
| US11519098B2 | Dislocation distribution for silicon carbide crystalline materials | Chemistry; Metallurgy | 3 | Active |
| US12054850B2 | Large diameter silicon carbide wafers | Electricity | 2 | Active |
| US7390367B1 | Housing assembly for an induction heating device including liner or susceptor coating | Chemistry; Metallurgy | 2 | Expired |
| US12125701B2 | Large dimension silicon carbide single crystalline materials with reduced crystallographic stress | Chemistry; Metallurgy | 1 | Active |
| US7880171B2 | Minimizing degradation of SiC bipolar semiconductor devices | Electricity | 0 | Expired |
| US9155131B2 | Methods for controllably induction heating an article | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.