Stepped upper electrode for plasma processing uniformity
US6824627B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2002 |
| Grant date | Nov 30, 2004 |
| Priority date | — |
| Expiry date | Mar 25, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T156/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.