Aaron Eppler
18Patents
6h-index
49Co-inventors
66Inventor score
Filing activity: Oct 13, 2000 → Nov 10, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6391787B1 | Stepped upper electrode for plasma processing uniformity | Emerging Cross-Sectional Technologies | 78 | Expired |
| US6921724B2 | Variable temperature processes for tunable electrostatic chuck | Electricity | 73 | Expired |
| US6824627B2 | Stepped upper electrode for plasma processing uniformity | Emerging Cross-Sectional Technologies | 62 | Expired |
| US7405521B2 | Multiple frequency plasma processor method and apparatus | Electricity | 24 | Expired |
| US7547635B2 | Process for etching dielectric films with improved resist and/or etch profile characteristics | Electricity | 15 | Expired |
| US7053003B2 | Photoresist conditioning with hydrogen ramping | Electricity | 6 | Expired |
| US7135410B2 | Etch with ramping | Electricity | 6 | Expired |
| US7645707B2 | Etch profile control | Electricity | 6 | Expired |
| US10446394B2 | Spacer profile control using atomic layer deposition in a multiple patterning process | Electricity | 5 | Active |
| US9018103B2 | High aspect ratio etch with combination mask | Electricity | 4 | Active |
| US7682480B2 | Photoresist conditioning with hydrogen ramping | Electricity | 3 | Active |
| US10763142B2 | System and method for determining field non-uniformities of a wafer processing chamber using a wafer processing parameter | Emerging Cross-Sectional Technologies | 0 | Active |
| US7544521B1 | Negative bias critical dimension trim | Electricity | 0 | Active |
| US9659783B2 | High aspect ratio etch with combination mask | Electricity | 0 | Active |
| US10242883B2 | High aspect ratio etch of oxide metal oxide metal stack | Electricity | 0 | Active |
| US9899227B2 | System, method and apparatus for ion milling in a plasma etch chamber | Electricity | 0 | Active |
| US12237149B2 | Reducing aspect ratio dependent etch with direct current bias pulsing | Electricity | 0 | Active |
| US12334354B2 | Sidewall passivation for plasma etching | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.