Process window enhancement for deep trench spacer conservation
US6825093B2 · kind B2 · utility
12Cited by
6References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 13, 2002 |
| Grant date | Nov 30, 2004 |
| Priority date | — |
| Expiry date | May 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/488
Abstract
In a process for manufacturing deep trench (32) memory cells, a method of enhancing the process window by better protecting the nitride spacer (52) prior to the process of stripping the pad nitride layer (38). The method also provides for the deposition of a nitride liner (64) and offers an additional advantage of not requiring the top shoulder (58) of the nitride spacer (52) to be over etched during its formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.