Method for manufacturing memory device
US6825129B2 · kind B2 · utility
25Cited by
31References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 24, 2002 |
| Grant date | Nov 30, 2004 |
| Priority date | — |
| Expiry date | May 24, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a method for manufacturing capacitor in a semiconductor memory device. The method for manufacturing a memory device having a dielectric layer includes the steps of forming a seed layer as a first dielectric layer by using an ALD method and forming a second dielectric layer by using a CVD method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.