CVD of porous dielectric materials
US6825130B2 · kind B2 · utility
16Cited by
27References
48Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 12, 2002 |
| Grant date | Nov 30, 2004 |
| Priority date | — |
| Expiry date | May 21, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76801
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Porous dielectric films useful in the semiconductor industry are prepared by depositing a Si—O—C film using precursors that contain carbon and oxygen, then heating the Si—O—C to decompose organic fragments trapped within.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.