Semiconductor device using an insulating layer having a seed layer
US6825538B2 · kind B2 · utility
6Cited by
8References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2002 |
| Grant date | Nov 30, 2004 |
| Priority date | — |
| Expiry date | Nov 20, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for manufacturing a semiconductor device comprising an insulating layer that includes a seed layer formed on a substrate. The seed layer is formed by removing hydrogen forming the substrate, depositing a seed layer precursor and exposing the precursor to excited atoms to form a seed layer on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.