Process for detaching layers of material
US6828216B2 · kind B2 · utility
11Cited by
11References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 1, 2003 |
| Grant date | Dec 7, 2004 |
| Priority date | — |
| Expiry date | Jul 4, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for detaching two layers of material according to a weakened zone defined between the layers. This process includes the thermal annealing of a structure that incorporates the layers, with the annealing bringing the temperature from a starting temperature to a final annealing temperature while evolving according to a first phase up to a transition temperature, then according to a second phase during which the rise in temperature per unit of time is greater than that of the first phase. The invention also concerns an application for using this process in a particular semiconductor fabrication technique.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.